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APT50M75JLLU3
ISOTOP(R) Buck chopper
MOSFET Power Module
D
VDSS = 500V RDSon = 75mW max @ Tj = 25C ID = 51A @ Tc = 25C
Application * AC and DC motor control * Switched Mode Power Supplies Features * Power MOS 7(R) MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * ISOTOP(R) Package (SOT-227) * Very low stray inductance * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Very rugged * Low profile
G S
A
S G D
A
ISOTOPO
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS IFAV IFRMS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Maximum Average Forward Current Duty cycle=0.5 RMS Forward Current (Square wave, 50% duty) Tc = 25C Tc = 80C Max ratings 500 51 39 204 30 75 290 51 50 2500 30 39 Unit V A V mW W A mJ A
Tc = 25C
Tc = 80C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
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APT50M75JLLU3 - Rev 0 April, 2004
APT50M75JLLU3
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 250A
VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V
Min 500 Tj = 25C Tj = 125C 3
Typ
Max 100 500 75 5 100
Unit V A mW V nA
VGS = 10V, ID = 25.5A VGS = VDS, ID = 1mA VGS = 20 V, VDS = 0V
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy u Turn-off Switching Energy v Turn-on Switching Energy u Turn-off Switching Energy v Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 51A Resistive Switching VGS = 15V VBus = 250V ID = 51A RG = 0.6W Inductive switching @ 25C VGS = 15V, VBus = 330V ID = 51A, RG = 5 Inductive switching @ 125C VGS = 15V, VBus = 330V ID = 51A, RG = 5 Min Typ 5590 1180 85 123 33 65 10 20 21 5 755 726 1241 846 J ns Max Unit pF
nC
J
u Eon includes diode reverse recovery v In accordance with JEDEC standard JESD24-1.
APT website - http://www.advancedpower.com
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APT50M75JLLU3 - Rev 0 April, 2004
APT50M75JLLU3
Diode ratings and characteristics
Symbol VF IRM CT trr Reverse Recovery Time IRRM Qrr trr Qrr IRRM Maximum Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A VR = 400V di/dt =1000A/s IF = 30A VR = 400V di/dt =200A/s Characteristic Diode Forward Voltage Maximum Reverse Leakage Current Junction Capacitance Reverse Recovery Time Test Conditions IF = 30A IF = 60A IF = 30A VR = 600V VR = 600V VR = 200V IF=1A,VR=30V di/dt =100A/s Min Typ 1.6 1.9 1.4 44 Tj = 25C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 125C 23 85 160 4 8 130 700 70 1300 30 ns Max 1.8 250 500 Unit V A pF
Tj = 125C Tj = 25C Tj = 125C
A nC ns nC A
Thermal and package characteristics
Symbol Characteristic RthJC RthJA VISOL TJ,TSTG TL Torque Wt Junction to Case Junction to Ambient (IGBT & Diode)
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min MOSFET Diode 2500 -55
Typ
Max 0.27 1.21 20 150 300 1.5
Unit C/W V C N.m g
Storage Temperature Range Max Lead Temp for Soldering:0.063" from case for 10 sec Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Package Weight
29.2
Typical MOSFET Performance Curve
APT website - http://www.advancedpower.com
3-8
APT50M75JLLU3 - Rev 0 April, 2004
APT50M75JLLU3
APT website - http://www.advancedpower.com
4-8
APT50M75JLLU3 - Rev 0 April, 2004
APT50M75JLLU3
APT website - http://www.advancedpower.com
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APT50M75JLLU3 - Rev 0 April, 2004
APT50M75JLLU3
Typical Diode Performance Curve
APT website - http://www.advancedpower.com
6-8
APT50M75JLLU3 - Rev 0 April, 2004
APT50M75JLLU3
APT website - http://www.advancedpower.com
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APT50M75JLLU3 - Rev 0 April, 2004
APT50M75JLLU3
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
1.95 (.077) 2.14 (.084)
Anode
Drain
* Emitter terminals are shorted internally. Current handling capability is equal for either Emitter terminal.
Source
Dimensions in Millimeters and (Inches)
Gate
APT50M75JLLU3 - Rev 0 April, 2004
ISOTOP(R) is a Registered Trademark of SGS Thomson APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
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